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| BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 A F Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G B E Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260C/10s Weight : 0.008gram (approximately) Dimensions A B C D E F G Unit (mm) Min 1.50 3.55 0.45 2.60 1.05 0.08 Max 1.70 3.85 0.65 2.80 1.25 0.15 Unit (inch) Min 0.059 0.140 0.018 0.102 0.041 0.003 Max 0.067 0.152 0.026 0.11 0.049 0.006 0.02 REF 0.50 REF Ordering Information Part No. BAS116 RF Package SOT-23 Packing 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current @ t= 1.0s Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol PD VRRM Io IFSM RJA TJ, TSTG Value 225 75 200 500 330 -55 to + 150 Units mW V mA mA C/W C Electrical Characteristics Type Number Reverse Breakdown Voltage IR= IF= Forward Voltage IF= IF= IF= Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) VR= 100A 1.0mA 10mA 50mA 150mA 75V IR CJ Trr VF Symbol V(BR) Min 75 Max 0.9 1.0 1.1 1.25 5 2.0 3.0 nA pF ns V Units V VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=10mA, RL=100[, IRR=1mA Version : B09 BAS116 225mW SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 1000 10000 FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (mA) Reverse Current (uA) 100 10 1 1000 Ta=25C Ta=25C 100 0.1 10 0.01 0 0.2 1 Instantaneous Forward Volatge (V) 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 Reverse Volatge (V) 40 60 80 100 120 FIG 3 Admissible Power Dissipation Curve 250 2 FIG 4 Typical Junction Capacitance Junction Capacitance (pF) 0 25 50 75 100 125 150 175 Power Dissipation (mW) 200 150 100 50 0 1.6 1.2 0.8 0.4 0 0 4 8 12 16 20 Ambient Temperature (C) Reverse Voltage (V) Version : B09 |
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